Room temperature processable silicon-containing molecular resist

Abstract

A novel silicon-containing molecular resist material based on polyhedral oligomeric silsesquioxane, possessing trimethoxysilyl groups, was designed in order to reduce post-exposure delay problems and to improve resolution. Since the acid-catalyzed cross-linking reaction of trimethoxysilyl groups occurs at room temperature, there is no necessity of post-exposure bake. The molecular resist showed 0.7 mu m line-and-space patterns using a mercury-xenon lamp in a contact printing mode and 100 nm line-and-space patterns using electron beam lithography.