Characteristics of Poly-Si TFT's with various active layer thicknesses formed using ECR oxidation and wet etching
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Choong Ki | - |
| dc.contributor.author | Chul-Hi Han | - |
| dc.date.accessioned | 2013-03-14T05:38:58Z | - |
| dc.date.available | 2013-03-14T05:38:58Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994 | - |
| dc.identifier.citation | International workshop on Active Matrix Liquid Crystal Displays, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/105762 | - |
| dc.language | ENG | - |
| dc.title | Characteristics of Poly-Si TFT's with various active layer thicknesses formed using ECR oxidation and wet etching | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | International workshop on Active Matrix Liquid Crystal Displays | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Kim, Choong Ki | - |
| dc.contributor.localauthor | Chul-Hi Han | - |
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