Accumulation mode field-effect transistors for improved sensitivity in nanowire-based biosensors

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In this work, nanowire field-effect transistors (NW-FETs) constructed from a top-down approach has been utilized for the detection of biomolecules. Here, we demonstrate that the sensitivity of NW-FET sensors can be greatly enhanced when the same dopant type is used for both channel region and source and drain. This type of FET, known as accumulation mode field-effect transistors (AM-FETs), functions under different operating principle compared with conventional inversion mode FETs. The improved sensitivity is attributed to the different conduction mechanism and current components of AM devices. The results have been verified through a direct comparison with a conventional FET. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4723843]
Publisher
AMER INST PHYSICS
Issue Date
2012-05
Language
English
Article Type
Article
Keywords

SILICON-NANOWIRE; ELECTRICAL DETECTION; DNA; SENSORS; DEPENDENCE; ARRAYS

Citation

APPLIED PHYSICS LETTERS, v.100, no.21

ISSN
0003-6951
DOI
10.1063/1.4723843
URI
http://hdl.handle.net/10203/104538
Appears in Collection
EE-Journal Papers(저널논문)
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