Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

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Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733478]
Publisher
AMER INST PHYSICS
Issue Date
2012-07
Language
English
Article Type
Article
Keywords

INJECTION; SILICON

Citation

APPLIED PHYSICS LETTERS, v.101, no.2

ISSN
0003-6951
DOI
10.1063/1.4733478
URI
http://hdl.handle.net/10203/104207
Appears in Collection
RIMS Journal Papers
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