Charge-carrier mediated ferromagnetism in Mo-doped In2O3 films

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We investigated the correlation between the ferromagnetism and electric resistivity of Mo-doped (3-10 at. %) In2O3 films. We find that the saturation magnetization increases with the Mo concentration until it reaches its maximum at 7 at. % Mo doping (7.1 emu/cm(3)), after which it rapidly decreases upon higher doping concentration. Interestingly, the resistivity reveals opposite behavior with the Mo concentration, showing a minimum value at 7 at. % Mo doping. According to the temperature-dependent resistivity and the Hall effect measurements, we find that the samples with higher magnetization show metallic behavior with higher electron concentration. Notably, the samples show a linear relationship between the carrier concentration and the degree of magnetization. We believe the ferromagnetism in Mo-doped In2O3 is ascribed to the indirect exchange interaction mediated by the charge carriers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4722928]
Publisher
AMER INST PHYSICS
Issue Date
2012-05
Language
English
Article Type
Article
Keywords

SEMICONDUCTORS; MAGNETISM

Citation

APPLIED PHYSICS LETTERS, v.100, no.22

ISSN
0003-6951
DOI
10.1063/1.4722928
URI
http://hdl.handle.net/10203/104070
Appears in Collection
RIMS Journal Papers
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