Thermo-compressive transfer printing for facile alignment and robust device integration of nanowires

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dc.contributor.authorLee, Won Seokko
dc.contributor.authorWon, Sejeongko
dc.contributor.authorPark, Jeungheeko
dc.contributor.authorLee, Jihyeko
dc.contributor.authorPark, Inkyuko
dc.date.accessioned2013-03-12T23:30:02Z-
dc.date.available2013-03-12T23:30:02Z-
dc.date.created2012-07-13-
dc.date.created2012-07-13-
dc.date.created2012-07-13-
dc.date.issued2012-03-
dc.identifier.citationNANOSCALE, v.4, no.11, pp.3444 - 3449-
dc.identifier.issn2040-3364-
dc.identifier.urihttp://hdl.handle.net/10203/103879-
dc.description.abstractControlled alignment and mechanically robust bonding between nanowires (NWs) and electrodes are essential requirements for reliable operation of functional NW-based electronic devices. In this work, we developed a novel process for the alignment and bonding between NWs and metal electrodes by using thermo-compressive transfer printing. In this process, bottom-up synthesized NWs were aligned in parallel by shear loading onto the intermediate substrate and then finally transferred onto the target substrate with low melting temperature metal electrodes. In particular, multi-layer (e.g. Cr/Au/In/Au and Cr/Cu/In/Au) metal electrodes are softened at low temperatures (below 100 degrees C) and facilitate submergence of aligned NWs into the surface of electrodes at a moderate pressure (similar to 5 bar). By using this thermo-compressive transfer printing process, robust electrical and mechanical contact between NWs and metal electrodes can be realized. This method is believed to be very useful for the large-area fabrication of NW-based electrical devices with improved mechanical robustness, electrical contact resistance, and reliability.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.titleThermo-compressive transfer printing for facile alignment and robust device integration of nanowires-
dc.typeArticle-
dc.identifier.wosid000304145900021-
dc.identifier.scopusid2-s2.0-84861378536-
dc.type.rimsART-
dc.citation.volume4-
dc.citation.issue11-
dc.citation.beginningpage3444-
dc.citation.endingpage3449-
dc.citation.publicationnameNANOSCALE-
dc.identifier.doi10.1039/c2nr30392b-
dc.contributor.localauthorPark, Inkyu-
dc.contributor.nonIdAuthorWon, Sejeong-
dc.contributor.nonIdAuthorPark, Jeunghee-
dc.contributor.nonIdAuthorLee, Jihye-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusZNO NANOWIRES-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusINTERDIFFUSION-
dc.subject.keywordPlusCOUPLES-
dc.subject.keywordPlusARRAYS-
dc.subject.keywordPlusAU-
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