DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Won Seok | ko |
dc.contributor.author | Won, Sejeong | ko |
dc.contributor.author | Park, Jeunghee | ko |
dc.contributor.author | Lee, Jihye | ko |
dc.contributor.author | Park, Inkyu | ko |
dc.date.accessioned | 2013-03-12T23:30:02Z | - |
dc.date.available | 2013-03-12T23:30:02Z | - |
dc.date.created | 2012-07-13 | - |
dc.date.created | 2012-07-13 | - |
dc.date.created | 2012-07-13 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | NANOSCALE, v.4, no.11, pp.3444 - 3449 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | http://hdl.handle.net/10203/103879 | - |
dc.description.abstract | Controlled alignment and mechanically robust bonding between nanowires (NWs) and electrodes are essential requirements for reliable operation of functional NW-based electronic devices. In this work, we developed a novel process for the alignment and bonding between NWs and metal electrodes by using thermo-compressive transfer printing. In this process, bottom-up synthesized NWs were aligned in parallel by shear loading onto the intermediate substrate and then finally transferred onto the target substrate with low melting temperature metal electrodes. In particular, multi-layer (e.g. Cr/Au/In/Au and Cr/Cu/In/Au) metal electrodes are softened at low temperatures (below 100 degrees C) and facilitate submergence of aligned NWs into the surface of electrodes at a moderate pressure (similar to 5 bar). By using this thermo-compressive transfer printing process, robust electrical and mechanical contact between NWs and metal electrodes can be realized. This method is believed to be very useful for the large-area fabrication of NW-based electrical devices with improved mechanical robustness, electrical contact resistance, and reliability. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Thermo-compressive transfer printing for facile alignment and robust device integration of nanowires | - |
dc.type | Article | - |
dc.identifier.wosid | 000304145900021 | - |
dc.identifier.scopusid | 2-s2.0-84861378536 | - |
dc.type.rims | ART | - |
dc.citation.volume | 4 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 3444 | - |
dc.citation.endingpage | 3449 | - |
dc.citation.publicationname | NANOSCALE | - |
dc.identifier.doi | 10.1039/c2nr30392b | - |
dc.contributor.localauthor | Park, Inkyu | - |
dc.contributor.nonIdAuthor | Won, Sejeong | - |
dc.contributor.nonIdAuthor | Park, Jeunghee | - |
dc.contributor.nonIdAuthor | Lee, Jihye | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | ZNO NANOWIRES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | INTERDIFFUSION | - |
dc.subject.keywordPlus | COUPLES | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | AU | - |
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