40 Gb/s Low-Power 4:1 Multiplexer Based on Resonant Tunneling Diodes

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dc.contributor.authorLee, Jong-Wonko
dc.contributor.authorChoi, Sun-Kyuko
dc.contributor.authorLee, Joo-Seokko
dc.contributor.authorYang, Kyoung-Hoonko
dc.date.accessioned2013-03-12T17:14:45Z-
dc.date.available2013-03-12T17:14:45Z-
dc.date.created2012-10-09-
dc.date.created2012-10-09-
dc.date.issued2012-09-
dc.identifier.citationIEEE TRANSACTIONS ON NANOTECHNOLOGY, v.11, no.5, pp.890 - 895-
dc.identifier.issn1536-125X-
dc.identifier.urihttp://hdl.handle.net/10203/102972-
dc.description.abstractAn integrated resonant tunneling diode (RTD)-based 4: 1 multiplexer core for low power consumption and high-speed operation is proposed. The proposed 4: 1 multiplexer core is designed based on a power-efficient negative differential resistance (NDR) circuit topology, which actively utilizes the unique NDR characteristics of the RTD. The proposed IC is comprised of two RTD-based 2: 1 multiplexers and a 2: 1 selector. The designed IC has been fabricated using an InP RTD/heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit technology, which is optimized by introducing an undercut process in the stacked RTD/HBT epistructure. A low power consumption of 75 mW at a supply voltage of -2.9 V has been achieved at a speed up to 40 Gb/s. The implemented IC, which has a higher complexity than monolithically integrated RTD/transistor digital circuits reported to date, is the first demonstration of a low-power high-speed 4: 1 multiplexer IC based on an NDR device technology.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectHIGH-SPEED-
dc.subjectCIRCUIT-
dc.subjectDEVICES-
dc.subjectPERFORMANCE-
dc.title40 Gb/s Low-Power 4:1 Multiplexer Based on Resonant Tunneling Diodes-
dc.typeArticle-
dc.identifier.wosid000308464100006-
dc.identifier.scopusid2-s2.0-84866085845-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue5-
dc.citation.beginningpage890-
dc.citation.endingpage895-
dc.citation.publicationnameIEEE TRANSACTIONS ON NANOTECHNOLOGY-
dc.identifier.doi10.1109/TNANO.2012.2204768-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYang, Kyoung-Hoon-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorHeterojunction bipolar transistors (HBTs)-
dc.subject.keywordAuthormultiplexing-
dc.subject.keywordAuthornegative resistance circuits-
dc.subject.keywordAuthorresonant tunneling diodes (RTDs)-
dc.subject.keywordPlusHIGH-SPEED-
dc.subject.keywordPlusCIRCUIT-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusPERFORMANCE-
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