DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jong-Won | ko |
dc.contributor.author | Choi, Sun-Kyu | ko |
dc.contributor.author | Lee, Joo-Seok | ko |
dc.contributor.author | Yang, Kyoung-Hoon | ko |
dc.date.accessioned | 2013-03-12T17:14:45Z | - |
dc.date.available | 2013-03-12T17:14:45Z | - |
dc.date.created | 2012-10-09 | - |
dc.date.created | 2012-10-09 | - |
dc.date.issued | 2012-09 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.11, no.5, pp.890 - 895 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | http://hdl.handle.net/10203/102972 | - |
dc.description.abstract | An integrated resonant tunneling diode (RTD)-based 4: 1 multiplexer core for low power consumption and high-speed operation is proposed. The proposed 4: 1 multiplexer core is designed based on a power-efficient negative differential resistance (NDR) circuit topology, which actively utilizes the unique NDR characteristics of the RTD. The proposed IC is comprised of two RTD-based 2: 1 multiplexers and a 2: 1 selector. The designed IC has been fabricated using an InP RTD/heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit technology, which is optimized by introducing an undercut process in the stacked RTD/HBT epistructure. A low power consumption of 75 mW at a supply voltage of -2.9 V has been achieved at a speed up to 40 Gb/s. The implemented IC, which has a higher complexity than monolithically integrated RTD/transistor digital circuits reported to date, is the first demonstration of a low-power high-speed 4: 1 multiplexer IC based on an NDR device technology. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | HIGH-SPEED | - |
dc.subject | CIRCUIT | - |
dc.subject | DEVICES | - |
dc.subject | PERFORMANCE | - |
dc.title | 40 Gb/s Low-Power 4:1 Multiplexer Based on Resonant Tunneling Diodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000308464100006 | - |
dc.identifier.scopusid | 2-s2.0-84866085845 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 890 | - |
dc.citation.endingpage | 895 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1109/TNANO.2012.2204768 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Heterojunction bipolar transistors (HBTs) | - |
dc.subject.keywordAuthor | multiplexing | - |
dc.subject.keywordAuthor | negative resistance circuits | - |
dc.subject.keywordAuthor | resonant tunneling diodes (RTDs) | - |
dc.subject.keywordPlus | HIGH-SPEED | - |
dc.subject.keywordPlus | CIRCUIT | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
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