DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Joo-Seok | ko |
dc.contributor.author | Lee, Jong-Won | ko |
dc.contributor.author | Yang, Kyoung-Hoon | ko |
dc.date.accessioned | 2013-03-12T16:49:52Z | - |
dc.date.available | 2013-03-12T16:49:52Z | - |
dc.date.created | 2012-07-18 | - |
dc.date.created | 2012-07-18 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.11, no.3, pp.431 - 434 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | http://hdl.handle.net/10203/102915 | - |
dc.description.abstract | A low-power 1:2 demultiplexer (DEMUX) IC based on a resonant tunneling diode (RTD) is proposed. In order to achieve low-power consumption, the unique negative differential resistance (NDR) characteristics arising from the quantum effect of the RTD are exploited. The proposed DEMUX IC consists of an return to zero (RZ)-mode 1:2 demultiplexing block and an RZ-to-nonreturn to zero converting block, which have a compact structure based on the NDR-based circuit topologies. By implementing the proposed IC using an InP RTD/heterojunction bipolar transistor monolithic microwave integrated circuit technology, 1:2 demultiplexing operation up to 40 Gb/s has been achieved with low-power consumption of 61mW. In addition, the result is the first demonstration of a 40-Gb/s-level current-mode-logic-type DEMUX IC based on the NDR topology. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | CIRCUIT | - |
dc.subject | DEVICES | - |
dc.subject | DESIGN | - |
dc.subject | CMOS | - |
dc.title | A Low-Power 40-Gb/s 1:2 Demultiplexer IC Based on a Resonant Tunneling Diode | - |
dc.type | Article | - |
dc.identifier.wosid | 000303894600001 | - |
dc.identifier.scopusid | 2-s2.0-84860854100 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 431 | - |
dc.citation.endingpage | 434 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1109/TNANO.2011.2171988 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Demultiplexing | - |
dc.subject.keywordAuthor | negative differential resistance (NDR) | - |
dc.subject.keywordAuthor | quantum effect | - |
dc.subject.keywordAuthor | resonant tunneling diode (RTD) | - |
dc.subject.keywordPlus | CIRCUIT | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | CMOS | - |
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