DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Young-Jun | ko |
dc.contributor.author | Noh, Hyeon-Kyun | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-12T15:31:05Z | - |
dc.date.available | 2013-03-12T15:31:05Z | - |
dc.date.created | 2012-08-21 | - |
dc.date.created | 2012-08-21 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.citation | PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2989 - 2992 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102734 | - |
dc.description.abstract | We investigate the stability of boron dopants near the interface between crystalline Si and amorphous SiO2 through first-principles density functional calculations. An interstitial B is found to be more stable in amorphous SiO2 than in Si, so that B dopants tend to segregate to the interface. When defects exist in amorphous SiO2, the stability of B is greatly enhanced, especially around Si floating bond defects, while it is not significantly affected near Si-Si dimers, which are formed by O-vacancy defects. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | AB-INITIO | - |
dc.subject | SILICON | - |
dc.subject | DIFFUSION | - |
dc.title | First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 | - |
dc.type | Article | - |
dc.identifier.wosid | 000305790800044 | - |
dc.identifier.scopusid | 2-s2.0-84862002918 | - |
dc.type.rims | ART | - |
dc.citation.volume | 407 | - |
dc.citation.issue | 15 | - |
dc.citation.beginningpage | 2989 | - |
dc.citation.endingpage | 2992 | - |
dc.citation.publicationname | PHYSICA B-CONDENSED MATTER | - |
dc.identifier.doi | 10.1016/j.physb.2011.08.050 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | B dopants | - |
dc.subject.keywordAuthor | B segregation | - |
dc.subject.keywordAuthor | Si/SiO2 interface | - |
dc.subject.keywordAuthor | Dopant segregation | - |
dc.subject.keywordAuthor | Metal-oxide-semiconductor field-effect-transistor | - |
dc.subject.keywordPlus | AB-INITIO | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DIFFUSION | - |
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