Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film

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dc.contributor.authorJeong, Hu Youngko
dc.contributor.authorKim, Jong Yunko
dc.contributor.authorYoon, Tae Hyunko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2013-03-12T15:15:09Z-
dc.date.available2013-03-12T15:15:09Z-
dc.date.created2012-11-30-
dc.date.created2012-11-30-
dc.date.created2012-11-30-
dc.date.issued2010-01-
dc.identifier.citationCURRENT APPLIED PHYSICS, v.10, no.1, pp.E46 - E49-
dc.identifier.issn1567-1739-
dc.identifier.urihttp://hdl.handle.net/10203/102685-
dc.description.abstractWe investigated the reversible resistive switching of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) thin films sandwiched between Al electrodes. The J-V sweep curve showed a hysteretic behavior which depends on the polarity of the applied voltage bias. From the analysis of I-V curves, it was revealed that the charge transport through the junction was governed by the bulk space-charge-limited conduction (SCLC) model. Using transmission electron microscopy (TEM) analysis, it was confirmed that the initial high resistance state of PEDOT:PSS films is related with the segregation of PSS chains induced by redox reaction between a Al metal electrode and PEDOT:PSS film. Positive space charges present on the top region of PEDOT:PSS films can be proposed as a possible trap centers of electron trapping and detrapping process. (C) 2009 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.titleBipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) thin film-
dc.typeArticle-
dc.identifier.wosid000278635400012-
dc.identifier.scopusid2-s2.0-77649237352-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.issue1-
dc.citation.beginningpageE46-
dc.citation.endingpageE49-
dc.citation.publicationnameCURRENT APPLIED PHYSICS-
dc.identifier.doi10.1016/j.cap.2009.12.011-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorJeong, Hu Young-
dc.contributor.nonIdAuthorKim, Jong Yun-
dc.contributor.nonIdAuthorYoon, Tae Hyun-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorPEDOT:PSS-
dc.subject.keywordAuthorResistive switching-
dc.subject.keywordAuthorTEM-
dc.subject.keywordAuthorEDS-
dc.subject.keywordPlusMEMORY DEVICES-
dc.subject.keywordPlusBISTABILITY-
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