DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Seoung-Hwan | ko |
dc.contributor.author | Ahn, Doyeol | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.date.accessioned | 2013-03-12T14:30:15Z | - |
dc.date.available | 2013-03-12T14:30:15Z | - |
dc.date.created | 2012-10-09 | - |
dc.date.created | 2012-10-09 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | IEEE PHOTONICS TECHNOLOGY LETTERS, v.24, no.6, pp.494 - 496 | - |
dc.identifier.issn | 1041-1135 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102592 | - |
dc.description.abstract | The optical properties of InGaN/MgZnO quantum wells (QWs) with zero internal field were investigated by using the non-Markovian model with many-body effects. For a given In composition in a well, a Mg composition y in a barrier was selected to give a zero internal field in a well. The Mg composition y in the barrier to give zero internal field is shown to increase with In composition x in the well. The InGaN/MgZnO QW structure has shorter transition wavelength than the InGaN/GaN QW structure because the internal field is negligible for the former case. Also, in the case of a relatively high In composition (x > 0.15), the InGaN/MgZnO system has a much larger spontaneous emission coefficient than the InGaN/GaN system. This can be explained by the fact that an optical matrix element is largely enhanced due to disappearance of the internal field. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | STRAINED WURTZITE SEMICONDUCTORS | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | LASERS | - |
dc.subject | GAN | - |
dc.subject | ORIENTATION | - |
dc.subject | GAIN | - |
dc.subject | ZNO | - |
dc.subject | ALN | - |
dc.title | High Efficient Polarization-Matched InGaN/MgZnO Quantum Well Structures | - |
dc.type | Article | - |
dc.identifier.wosid | 000308405600001 | - |
dc.identifier.scopusid | 2-s2.0-84863297203 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 494 | - |
dc.citation.endingpage | 496 | - |
dc.citation.publicationname | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.identifier.doi | 10.1109/LPT.2011.2179978 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Park, Seoung-Hwan | - |
dc.contributor.nonIdAuthor | Ahn, Doyeol | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | InGaN | - |
dc.subject.keywordAuthor | light-emitting diode | - |
dc.subject.keywordAuthor | MgZnO | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordPlus | STRAINED WURTZITE SEMICONDUCTORS | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | GAIN | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | ALN | - |
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