DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jin-Hyock | ko |
dc.contributor.author | Ahn, Ji-Hoon | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.contributor.author | Roh, Jae-Sung | ko |
dc.contributor.author | Kwon, Se-Hun | ko |
dc.contributor.author | Kim, Ja-Yong | ko |
dc.date.accessioned | 2013-03-12T14:08:04Z | - |
dc.date.available | 2013-03-12T14:08:04Z | - |
dc.date.created | 2012-12-24 | - |
dc.date.created | 2012-12-24 | - |
dc.date.issued | 2012-09 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v.12, pp.S160 - S163 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102543 | - |
dc.description.abstract | Thermal stability of RuO2 thin films formed by modified atomic layer deposition on SiO2 substrate was investigated. Rapid thermal annealing was conducted for 2 min under NH3 and N-2 ambient. It was demonstrated that NH3 gas can completely reduce RuO2 to pure Ru at a relatively low annealing temperature of 500 degrees C, while partial reduction of RuO2 into Ru at the outmost surface was observed after N-2 annealing. Agglomeration of the NH3 annealed film was not observed due to high quality of the as-deposited film that was dense and had low level of impurities such as hydrogen and carbon. (C) 2012 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | ELECTRODES | - |
dc.subject | RUTHENIUM | - |
dc.subject | GAS | - |
dc.title | Thermal stability of RuO2 thin films prepared by modified atomic layer deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000310941500031 | - |
dc.identifier.scopusid | 2-s2.0-84867560335 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.beginningpage | S160 | - |
dc.citation.endingpage | S163 | - |
dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
dc.identifier.doi | 10.1016/j.cap.2012.02.050 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Kim, Jin-Hyock | - |
dc.contributor.nonIdAuthor | Ahn, Ji-Hoon | - |
dc.contributor.nonIdAuthor | Roh, Jae-Sung | - |
dc.contributor.nonIdAuthor | Kwon, Se-Hun | - |
dc.contributor.nonIdAuthor | Kim, Ja-Yong | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Thermal stability | - |
dc.subject.keywordAuthor | Modified atomic layer deposition | - |
dc.subject.keywordAuthor | RuO2 | - |
dc.subject.keywordAuthor | NH3 annealing | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | RUTHENIUM | - |
dc.subject.keywordPlus | GAS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.