DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Jung-Won | ko |
dc.contributor.author | Baik, Seung-Jae | ko |
dc.contributor.author | Kang, Sang-Jung | ko |
dc.contributor.author | Hong, Yun-Ho | ko |
dc.contributor.author | Yang, Ji-Hwan | ko |
dc.contributor.author | Lim, Koeng-Su | ko |
dc.date.accessioned | 2013-03-12T13:26:11Z | - |
dc.date.available | 2013-03-12T13:26:11Z | - |
dc.date.created | 2012-12-10 | - |
dc.date.created | 2012-12-10 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.98, no.23, pp.233505 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102463 | - |
dc.description.abstract | We report cross-bar array resistive random access memory (RRAM) devices based on a ZnO thin film fabricated at room temperature. To prevent the sneak current path in a conventional cross-bar array device, two types of heterostructure diodes, a NiO/ZnO p-n junction and a WO3/ZnO tunnel barrier both stacked on cross-bar array RRAM were employed. With rectifying characteristics and high forward current density, the sneak current path was effectively eliminated. We believe that the proposed structures are promising for cross-bar type RRAM applications. c 2011 American Institute of Physics. [doi: 10.1063/1.3599707] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DENSITY NONVOLATILE MEMORY | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | NIO | - |
dc.title | A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect | - |
dc.type | Article | - |
dc.identifier.wosid | 000291658900080 | - |
dc.identifier.scopusid | 2-s2.0-79959343875 | - |
dc.type.rims | ART | - |
dc.citation.volume | 98 | - |
dc.citation.issue | 23 | - |
dc.citation.beginningpage | 233505 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3599707 | - |
dc.contributor.localauthor | Lim, Koeng-Su | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DENSITY NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | NIO | - |
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