Organic Thin Film Transistors Using a Polyhedral Oligomeric Silsesquioxane-Based Photo-Patternable Insulating Material

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We synthesized a new photo-patternable organic/inorganic hybrid material, polyhedral oligomeric silsesquioxane (POSS) derivative containing cyclohexene-1,2-epoxide functional groups (POSS-EPOXY), and fabricated an organic thin film transistor (OTFT) using pentacene as an active p-type organic semiconductor and POSS-EPOXY as a gate dielectric layer to demonstrate its applicability for organic electronics. The pentacene transistor with the POSS-EPOXY layer shows comparable transistor characteristics as that with the prototypical polymeric gate insulator of poly(vinylphenol) (PVP). They exhibit field-effect mobility of mu(FET) approximate to 0.075 cm(2)/Vs, threshold voltage of V(T) = -22.2 V, the on/off current ratio of 7 x 10(5), and the subthreshold slope of 3.9 V/dec.
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2009-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

FIELD-EFFECT TRANSISTORS; POLYIMIDE

Citation

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, no.12, pp.6923 - 6927

ISSN
1533-4880
DOI
10.1166/jnn.2009.1648
URI
http://hdl.handle.net/10203/102434
Appears in Collection
CH-Journal Papers(저널논문)
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