DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Yong-Hoon | ko |
dc.contributor.author | Kim, Hu Sung | ko |
dc.date.accessioned | 2013-03-12T12:22:34Z | - |
dc.date.available | 2013-03-12T12:22:34Z | - |
dc.date.created | 2012-08-01 | - |
dc.date.created | 2012-08-01 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.100, no.21 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102313 | - |
dc.description.abstract | Employing open-ended carbon nanotubes (CNTs) with and without hydrogen termination, we study the length scaling of metal-CNT contact resistance and its correlation with chemical bonding from first principles. Both models similarly show a transition from the fast-growing short-length scaling to the slow-growing long-length scaling. However, while the hydrogenated CNTs have much lower short-length resistances than H-free CNTs, Schottky barrier of the former is almost twice thicker and its eventual long-length-limit resistance becomes significantly higher. This demonstrates the critical role of atomistic details in metal-CNT contacts and localized CNT edge states for the Schottky barrier shape and metal-induced gap states. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4721487] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | DEPENDENCE | - |
dc.subject | TRANSPORT | - |
dc.subject | SINGLE | - |
dc.title | Anomalous length scaling of carbon nanotube-metal contact resistance: An ab initio study | - |
dc.type | Article | - |
dc.identifier.wosid | 000304489900063 | - |
dc.identifier.scopusid | 2-s2.0-84861824436 | - |
dc.type.rims | ART | - |
dc.citation.volume | 100 | - |
dc.citation.issue | 21 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4721487 | - |
dc.contributor.localauthor | Kim, Yong-Hoon | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SINGLE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.