Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato)aluminum-based organic light-emitting diodes

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Long-term current drift and dielectric relaxation in organic thin films of a single-layer structure pose a serious problem for the accurate measurement of magnetoresistance at low magnetic fields. A new measurement scheme was devised to minimize errors and to report that the magnetoresistance in tris(8-hydroxyquinolinato)aluminum obeys a power law on the magnetic field at 300, 100, and 4.2 K in an entire range from 1 to 140 mT. The exponent of the power increases gradually from 0.47 for a bias voltage of 3 V to 0.58 for a bias voltage of 8 V. The magnetoresistance was observable above the threshold voltage only and its sign was always negative. (C) 2012 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2012-06
Language
English
Article Type
Article
Keywords

AMORPHOUS-SEMICONDUCTORS; SANDWICH DEVICES; ROOM-TEMPERATURE

Citation

ORGANIC ELECTRONICS, v.13, no.6, pp.1012 - 1017

ISSN
1566-1199
DOI
10.1016/j.orgel.2012.02.025
URI
http://hdl.handle.net/10203/101385
Appears in Collection
PH-Journal Papers(저널논문)
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