Multi Scale Modeling and Simulation for Oxygen Precipitate Behavior in Silicon Wafer

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dc.contributor.authorLee, Sang Hunko
dc.contributor.authorKang, Jeong Wonko
dc.contributor.authorKim, DoHyunko
dc.date.accessioned2013-03-12T04:17:05Z-
dc.date.available2013-03-12T04:17:05Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2011-07-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.7, pp.5980 - 5984-
dc.identifier.issn1533-4880-
dc.identifier.urihttp://hdl.handle.net/10203/101297-
dc.description.abstractOxygen precipitates in semiconductor device are generally considered beneficial for its metallic contaminants gettering function, but the oxygen precipitates also affect to degrade the efficiency of solar cell. The formation of oxygen precipitates is closely related to the grown-in defects like oxygen in crystal growth process and heat treatment cycle in device process. Oxygen comes into the silicon melt by dissolving quartz (SiO(2)) crucible and incorporates into the silicon crystal in Czochralski process. The oxygen plays key role in the formation of oxygen precipitate nuclei in crystal growth process and then the nuclei grow up to be oxygen precipitates in device process. Therefore, the formation of oxygen precipitates is closely related to the crystal growing process and device manufacturing process. In this research, we interpreted the formation and behavior of oxygen precipitates depending on varying oxygen concentrations by using Multi_Scale method. The method is very useful to obtain more reliable interpretation result than other single methods. The validity of this research is verified by comparing with experimental data.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectMONTE-CARLO-SIMULATION-
dc.subjectCZOCHRALSKI SILICON-
dc.subjectDEFECTS FORMATION-
dc.subjectVOID DEFECTS-
dc.subjectGROWTH-
dc.subjectTEMPERATURE-
dc.subjectNUCLEATION-
dc.titleMulti Scale Modeling and Simulation for Oxygen Precipitate Behavior in Silicon Wafer-
dc.typeArticle-
dc.identifier.wosid000293663200068-
dc.identifier.scopusid2-s2.0-84863057020-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue7-
dc.citation.beginningpage5980-
dc.citation.endingpage5984-
dc.citation.publicationnameJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.localauthorKim, DoHyun-
dc.contributor.nonIdAuthorKang, Jeong Won-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorComputer Simulation-
dc.subject.keywordAuthorKinetic Monte Carlo-
dc.subject.keywordAuthorOxygen Precipitate-
dc.subject.keywordAuthor300 mm Si Wafer-
dc.subject.keywordAuthorSemiconducting Silicon-
dc.subject.keywordPlusMONTE-CARLO-SIMULATION-
dc.subject.keywordPlusCZOCHRALSKI SILICON-
dc.subject.keywordPlusDEFECTS FORMATION-
dc.subject.keywordPlusVOID DEFECTS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusNUCLEATION-
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