DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Hyung-Mo | ko |
dc.contributor.author | Lee, Jung-Woo | ko |
dc.contributor.author | Shin, Weon-Ho | ko |
dc.contributor.author | Choi, Yoon-Jeong | ko |
dc.contributor.author | Shin, Hyun-Joon | ko |
dc.contributor.author | Kang, Jeung-Ku | ko |
dc.contributor.author | Choi, Jang-Wook | ko |
dc.date.accessioned | 2013-03-12T01:30:32Z | - |
dc.date.available | 2013-03-12T01:30:32Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.citation | NANO LETTERS, v.11, no.6, pp.2472 - 2477 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/100966 | - |
dc.description.abstract | Although various carbon nanomaterials including activated carbon, carbon nanotubes, and graphene have been successfully demonstrated for high-performance ultracapacitors, their capacitances need to be improved further for wider and more challenging applications. Herein, using nitrogen-doped graphene produced by a simple plasma process, we developed ultracapacitors whose capacitances (similar to 280 F/g(electrode)) are about 4 times larger than those of pristine graphene based counterparts without sacrificing other essential and useful properties for ultracapacitor operations including excellent cycle life (>200000), high power capability, and compatibility with flexible substrates. While we were trying to understand the improved capacitance using scanning photoemission microscopy with a capability of probing local nitrogen-carbon bonding configurations within a single sheet of graphene, we observed interesting microscopic features of N-configurations: N-doped sites even at basal planes, distinctive distributions of N-configurations between edges and basal planes, and their distinctive evolutions with plasma duration. The local N-configuration mappings during plasma treatment, alongside binding energy calculated by density functional theory, revealed that the origin of the improved capacitance is a certain N-configuration at basal planes. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | CARBON NANOTUBE ELECTRODES | - |
dc.subject | ENERGY-STORAGE DEVICES | - |
dc.subject | ELECTROCHEMICAL CAPACITORS | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | CONDUCTING POLYMERS | - |
dc.subject | SUPERCAPACITORS | - |
dc.subject | FILMS | - |
dc.subject | OXIDE | - |
dc.subject | DEPOSITION | - |
dc.subject | REDUCTION | - |
dc.title | Nitrogen-Doped Graphene for High-Performance Ultracapacitors and the Importance of Nitrogen-Doped Sites at Basal Planes | - |
dc.type | Article | - |
dc.identifier.wosid | 000291322600048 | - |
dc.identifier.scopusid | 2-s2.0-79958784559 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 2472 | - |
dc.citation.endingpage | 2477 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.contributor.localauthor | Kang, Jeung-Ku | - |
dc.contributor.localauthor | Choi, Jang-Wook | - |
dc.contributor.nonIdAuthor | Choi, Yoon-Jeong | - |
dc.contributor.nonIdAuthor | Shin, Hyun-Joon | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ultracapacitor | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | nitrogen doping | - |
dc.subject.keywordAuthor | plasma treatment | - |
dc.subject.keywordAuthor | scanning photoemission microscopy | - |
dc.subject.keywordAuthor | local mapping | - |
dc.subject.keywordPlus | CARBON NANOTUBE ELECTRODES | - |
dc.subject.keywordPlus | ENERGY-STORAGE DEVICES | - |
dc.subject.keywordPlus | ELECTROCHEMICAL CAPACITORS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | CONDUCTING POLYMERS | - |
dc.subject.keywordPlus | SUPERCAPACITORS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | REDUCTION | - |
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