Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM)

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dc.contributor.authorHan, Jin-Wooko
dc.contributor.authorRyu, Seong-Wanko
dc.contributor.authorChoi, Sung-Jinko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-03-11T23:58:52Z-
dc.date.available2013-03-11T23:58:52Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-02-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.30, no.2, pp.189 - 191-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/100733-
dc.description.abstractA soft-programming-free operation method in unified RAM (URAM) is presented. An oxide/nitride/oxide (O/N/O) layer and a floating-body are integrated in a FinFET, thereby providing the versatile functions of a high-speed capacitorless 1T-DRAM, as well as nonvolatile memory, and the mode of the memory cell can be selected and independently utilized according to the designer's demand. With the utilization of the impact ionization method for IT-DRAM programming, undesired soft charge trapping into O/N/O gradually shifts the threshold voltage, resulting in an unstable operation in the URAM. In order to avoid such problems associated with soft programming, a gate-induced drain-leakage (GIDL) program method is proposed for improved immunity to disturbance. It is found that the GIDL method effectively suppresses soft programming without sacrificing the sensing current window.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectNONVOLATILE MEMORY DEVICES-
dc.subjectCAPACITORLESS 1T-DRAM-
dc.subjectFINFET-
dc.titleGate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM)-
dc.typeArticle-
dc.identifier.wosid000262861600029-
dc.identifier.scopusid2-s2.0-59649117424-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.issue2-
dc.citation.beginningpage189-
dc.citation.endingpage191-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2008.2010345-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorDisturbance-
dc.subject.keywordAuthorFinFET-
dc.subject.keywordAuthorgate-induced drain leakage (GIDL)-
dc.subject.keywordAuthornonvolatile memory (NVM)-
dc.subject.keywordAuthorsoft program-
dc.subject.keywordAuthorSONOS-
dc.subject.keywordAuthorunified RAM (URAM)-
dc.subject.keywordAuthor1T-DRAM-
dc.subject.keywordPlusNONVOLATILE MEMORY DEVICES-
dc.subject.keywordPlusCAPACITORLESS 1T-DRAM-
dc.subject.keywordPlusFINFET-
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