DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sung-Ho | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-11T23:54:29Z | - |
dc.date.available | 2013-03-11T23:54:29Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-11 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2670 - 2674 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/100725 | - |
dc.description.abstract | A disturb-free unified RAM (URAM) is demonstrated. It consists of a nonvolatile memory (NVM) and a capacitorless dynamic random access memory (DRAM) in a single-cell transistor. The NVM function is achieved by the resistive switching of an Al(2)O(3) film, and the capacitorless DRAM operation is attained by hole accumulation in a floating body. A property of resistive switching-an abrupt change of the bistable resistance state at a specific voltage-permits a high level of immunity to disturbances between NVM and capacitorless DRAM (1T-DRAM) operations compared to the previously proposed URAM whose NVM characteristics originate from charge trapping in the oxide/nitride/oxide layer. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | NVM | - |
dc.subject | 1T-DRAM | - |
dc.subject | FINFET | - |
dc.subject | DRAM | - |
dc.subject | CELL | - |
dc.title | Resistive-Memory Embedded Unified RAM (R-URAM) | - |
dc.type | Article | - |
dc.identifier.wosid | 000271019500038 | - |
dc.identifier.scopusid | 2-s2.0-70350741211 | - |
dc.type.rims | ART | - |
dc.citation.volume | 56 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 2670 | - |
dc.citation.endingpage | 2674 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2009.2030441 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Capacitorless dynamic random access memory (1T-DRAM) | - |
dc.subject.keywordAuthor | disturb-free | - |
dc.subject.keywordAuthor | dynamic random access memory (DRAM) | - |
dc.subject.keywordAuthor | nonvolatile memory (NVM) | - |
dc.subject.keywordAuthor | resistance random access memory (RRAM) | - |
dc.subject.keywordAuthor | resistive-memory embedded unified RAM (R-URAM) | - |
dc.subject.keywordAuthor | soft programming | - |
dc.subject.keywordAuthor | unified RAM (URAM) | - |
dc.subject.keywordPlus | NVM | - |
dc.subject.keywordPlus | 1T-DRAM | - |
dc.subject.keywordPlus | FINFET | - |
dc.subject.keywordPlus | DRAM | - |
dc.subject.keywordPlus | CELL | - |
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