DESIGN OF X-BAND 6-BIT CMOS PHASE SHIFTER FOR PHASED ARRAY T/R MODULES

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dc.contributor.authorKang, Dong-Wooko
dc.contributor.authorKu, Bon-Hyunko
dc.contributor.authorHong, Songcheolko
dc.date.accessioned2013-03-11T23:52:19Z-
dc.date.available2013-03-11T23:52:19Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-10-
dc.identifier.citationMICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.51, no.10, pp.2404 - 2406-
dc.identifier.issn0895-2477-
dc.identifier.urihttp://hdl.handle.net/10203/100720-
dc.description.abstractThis article presents the design of a 6-bit phase shifter in a 0.18-mu m CMOS technology for X-band phased array radar application. Meandered microstrip lines and compact circuit designs techniques yield a chip with 1.9 mm(2) die area. The fabricated phase shifter demonstrates a typical 15.7 +/- 1.1 dB insertion loss and a 4 degrees rms phase shift error at 9.5 GHZ. To the author's knowledge, this is the first demonstration of a 6-bit phase shifter using CMOS switches with the lowest die area among reciprocal digital phase shifters at X-band. (C) 2009 Wiley periodicals. Inc. Microwave Opt Technol Lett 51: 2404-2406, 2009 Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24663-
dc.languageEnglish-
dc.publisherJOHN WILEY & SONS INC-
dc.titleDESIGN OF X-BAND 6-BIT CMOS PHASE SHIFTER FOR PHASED ARRAY T/R MODULES-
dc.typeArticle-
dc.identifier.wosid000268908600039-
dc.identifier.scopusid2-s2.0-68349161226-
dc.type.rimsART-
dc.citation.volume51-
dc.citation.issue10-
dc.citation.beginningpage2404-
dc.citation.endingpage2406-
dc.citation.publicationnameMICROWAVE AND OPTICAL TECHNOLOGY LETTERS-
dc.identifier.doi10.1002/mop.24663-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorKang, Dong-Woo-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS integrated circuits-
dc.subject.keywordAuthormicrostrip circuit-
dc.subject.keywordAuthorphase shifter-
dc.subject.keywordAuthorphased array radar-
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