DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Wonchul | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2013-03-11T21:51:44Z | - |
dc.date.available | 2013-03-11T21:51:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, pp.5861 - 5864 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/10203/100411 | - |
dc.description.abstract | A full quantum-mechanical simulation of p-type nanowire Schottky barrier metal oxide silicon field effect transistors (SB-MOSFETs) is performed by solving the three-dimensional Schrodinger and Poisson's equations self-consistently. The non-equilibrium Green's function (NEGF) approach is adopted to treat hole transport, especially quantum tunneling through SB. In this work, p-type nanowire SB-MOSFETs are simulated based on the 3-band k.p method, using the k.p parameters that were tuned by benchmarking against the tight-binding method with sp(3)s* orbitals. The device shows a strong dependence on the transport direction, due to the orientation-sensitive tunneling effective mass and the confinement energy. With regard to the subthreshold slope, the [110] and [111] oriented devices with long channel show better performance, but they are more vulnerable to the short channel effects than the [100] oriented device. The threshold voltage also shows a greater variation in the [110] and [111] oriented devices with the decrease of the channel length. | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | NANOWIRE PMOSFETS | - |
dc.subject | PERFORMANCE | - |
dc.subject | SILICON | - |
dc.subject | BODY | - |
dc.title | Quantum Mechanical Simulation of Hole Transport in p-Type Si Schottky Barrier MOSFETs | - |
dc.type | Article | - |
dc.identifier.wosid | 000293663200046 | - |
dc.identifier.scopusid | 2-s2.0-84856813696 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.beginningpage | 5861 | - |
dc.citation.endingpage | 5864 | - |
dc.citation.publicationname | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Choi, Wonchul | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Nanowire | - |
dc.subject.keywordAuthor | Schottky Barrier | - |
dc.subject.keywordAuthor | MOSFETs | - |
dc.subject.keywordAuthor | Quantum Transport | - |
dc.subject.keywordAuthor | Device Simulation | - |
dc.subject.keywordAuthor | Hole | - |
dc.subject.keywordAuthor | Valence Band | - |
dc.subject.keywordAuthor | The k.p Method | - |
dc.subject.keywordAuthor | Non-Equilibrium Green&apos | - |
dc.subject.keywordAuthor | s Function | - |
dc.subject.keywordPlus | NANOWIRE PMOSFETS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | BODY | - |
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