Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors

Abstract

Device performance of p-type nanowire Schotty barrier metal-oxide-semiconductor field-effect transistors is investigated focusing on the channel orientation effects. A rigorous quantum-mechanical calculation of hole current based on the multiband k.p method is carried out. The [111] oriented devices show the most superior performance, in terms of subthreshold slope, threshold voltage variation, and on-current. In particular, on-current in the [111] oriented devices is about twice as large as that in the [100] oriented devices. Tunneling effective mass, quantization energy, and Schottky barrier thickness are examined as the major factors that influence on the orientation-dependent current injection into the channel. (C) 2010 American Institute of Physics. [doi:10.1063/1.3485062]