Hysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation

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dc.contributor.authorKang, Il-Sukko
dc.contributor.authorKim, Young-Suko
dc.contributor.authorSeo, Hyun-Sangko
dc.contributor.authorAhn, Chi Wonko
dc.contributor.authorYang, JMko
dc.contributor.authorHwang, Wook-Jungko
dc.date.accessioned2013-03-11T19:46:26Z-
dc.date.available2013-03-11T19:46:26Z-
dc.date.created2012-05-16-
dc.date.created2012-05-16-
dc.date.issued2011-
dc.identifier.citationCURRENT APPLIED PHYSICS, v.11, no.6, pp.1319 - 1321-
dc.identifier.issn1567-1739-
dc.identifier.urihttp://hdl.handle.net/10203/100085-
dc.description.abstractThe effect of two-step hydrog enation, consisting of plasma hydrogenation and annealing in hydrogen, on the hysteresis phenomenon of metal-induced unilaterally crystallized silicon thin-film transistors (MIUC-Si TFTs) was investigated. The large hysteresis level of the conventional MIUC-Si TFTs caused a wide variation of the drain current with the previous gate voltage. As the plasma exposure time increased, the plasma hydrogenation commonly used for stability in poly-Si TFTs was found to increase the hysteresis level of MIUC-Si TFTs after a minimum point. This is because plasma-induced damages correlated with unique defects of MIUC-Si such as metal-related weak bonds, are accompanied by passivation. The following annealing repaired the damages. Consequently the hysteresis level was lower, which resulted in a narrower variation of the drain current. (C) 2011 Elsevier B. V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectINDUCED LATERAL CRYSTALLIZATION-
dc.subjectLIGHT-EMITTING DIODE-
dc.subjectPOLY-SI TFT-
dc.subjectTEMPERATURE-
dc.subjectPLASMA-
dc.subjectDEFECTS-
dc.subjectPIXEL-
dc.titleHysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation-
dc.typeArticle-
dc.identifier.wosid000294290300012-
dc.identifier.scopusid2-s2.0-80052252957-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue6-
dc.citation.beginningpage1319-
dc.citation.endingpage1321-
dc.citation.publicationnameCURRENT APPLIED PHYSICS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.nonIdAuthorKang, Il-Suk-
dc.contributor.nonIdAuthorKim, Young-Su-
dc.contributor.nonIdAuthorSeo, Hyun-Sang-
dc.contributor.nonIdAuthorHwang, Wook-Jung-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorActive matrix organic light-emitting diode (AMOLED)-
dc.subject.keywordAuthorHysteresis Metal-induced unilateral crystallization (MIUC)-
dc.subject.keywordAuthorThin-film transistor (TFT)-
dc.subject.keywordPlusINDUCED LATERAL CRYSTALLIZATION-
dc.subject.keywordPlusLIGHT-EMITTING DIODE-
dc.subject.keywordPlusPOLY-SI TFT-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusPLASMA-
dc.subject.keywordPlusDEFECTS-
dc.subject.keywordPlusPIXEL-
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