DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Il-Suk | ko |
dc.contributor.author | Kim, Young-Su | ko |
dc.contributor.author | Seo, Hyun-Sang | ko |
dc.contributor.author | Ahn, Chi Won | ko |
dc.contributor.author | Yang, JM | ko |
dc.contributor.author | Hwang, Wook-Jung | ko |
dc.date.accessioned | 2013-03-11T19:46:26Z | - |
dc.date.available | 2013-03-11T19:46:26Z | - |
dc.date.created | 2012-05-16 | - |
dc.date.created | 2012-05-16 | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v.11, no.6, pp.1319 - 1321 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/10203/100085 | - |
dc.description.abstract | The effect of two-step hydrog enation, consisting of plasma hydrogenation and annealing in hydrogen, on the hysteresis phenomenon of metal-induced unilaterally crystallized silicon thin-film transistors (MIUC-Si TFTs) was investigated. The large hysteresis level of the conventional MIUC-Si TFTs caused a wide variation of the drain current with the previous gate voltage. As the plasma exposure time increased, the plasma hydrogenation commonly used for stability in poly-Si TFTs was found to increase the hysteresis level of MIUC-Si TFTs after a minimum point. This is because plasma-induced damages correlated with unique defects of MIUC-Si such as metal-related weak bonds, are accompanied by passivation. The following annealing repaired the damages. Consequently the hysteresis level was lower, which resulted in a narrower variation of the drain current. (C) 2011 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | INDUCED LATERAL CRYSTALLIZATION | - |
dc.subject | LIGHT-EMITTING DIODE | - |
dc.subject | POLY-SI TFT | - |
dc.subject | TEMPERATURE | - |
dc.subject | PLASMA | - |
dc.subject | DEFECTS | - |
dc.subject | PIXEL | - |
dc.title | Hysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation | - |
dc.type | Article | - |
dc.identifier.wosid | 000294290300012 | - |
dc.identifier.scopusid | 2-s2.0-80052252957 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 1319 | - |
dc.citation.endingpage | 1321 | - |
dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.nonIdAuthor | Kang, Il-Suk | - |
dc.contributor.nonIdAuthor | Kim, Young-Su | - |
dc.contributor.nonIdAuthor | Seo, Hyun-Sang | - |
dc.contributor.nonIdAuthor | Hwang, Wook-Jung | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Active matrix organic light-emitting diode (AMOLED) | - |
dc.subject.keywordAuthor | Hysteresis Metal-induced unilateral crystallization (MIUC) | - |
dc.subject.keywordAuthor | Thin-film transistor (TFT) | - |
dc.subject.keywordPlus | INDUCED LATERAL CRYSTALLIZATION | - |
dc.subject.keywordPlus | LIGHT-EMITTING DIODE | - |
dc.subject.keywordPlus | POLY-SI TFT | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | PIXEL | - |
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