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Showing results 1 to 3 of 3

1
Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Ahn, Juhan; Kim, Jeong-Kyu; Kim, Sun-Woo; Kim, Gwang-Sik; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708, 2016-06

2
Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Ahn, Hyunjun; Moon, Jungmin; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Hwang, Wan Sik; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603, 2017-06

3
Realization of high-performance screen-printed flexible thermoelectric generator by improving contact characteristics

Kim, Yongjun; Kim, Sun Jin; Choi, Hyeongdo; Kim, Choong Sun; Lee, Gyusoup; Park, Sang Hyun; Cho, Byung-Jin, ADVANCED MATERIALS INTERFACES, v.4, no.23, 2017-12

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