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Showing results 1 to 13 of 13

A direct coupling method for 3D hydroelastic analysis of floating structures

Kim, Ki-Tae; Lee, PhillSeungresearcher; Park, K. C., INTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN ENGINEERING, v.96, no.13, pp.842 - 866, 2013-12

A modified mathematical model for spiral coil-type horizontal ground heat exchangers

Jeon, Jun-Seo; Lee, Seung-Raeresearcher; Kim, Min-Jun, ENERGY, v.152, pp.732 - 743, 2018-06

Analysis of a ridge waveguide using overlapping T-Blocks

Cho, YH; Eom, Hyo Joonresearcher, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.50, no.10, pp.2368 - 2373, 2002-10

Carbon nanotube, graphene, nanowire, and molecule-based electron and spin transport phenomena using the nonequilibrium Greens function method at the level of first principles theory

Kim, Woo Younresearcher; Kim, KS, JOURNAL OF COMPUTATIONAL CHEMISTRY, v.29, no.7, pp.1073 - 1083, 2008-05

Complete Nevanlinna counting functions of boundary-preserving Nevanlinna functions

Ahern, Patrick; Kim, Hong-Ohresearcher, COMPLEX VARIABLES AND ELLIPTIC EQUATIONS, v.60, no.1, pp.118 - 133, 2015-01

Computational Study on the Performance of Si Nanowire pMOSFETs Based on the k . p Method

Shin, Mincheolresearcher; Lee, S; Klimeck, G, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.9, pp.2274 - 2283, 2010-09

Efficient Atomistic Simulation of Heterostucture Field-Effect Transistors

Ahn, Yongsoo; Shin, Mincheolresearcher, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.668 - 676, 2019-08

First-principles approach to the electron transport and applications for devices based on carbon nanotubes and ultrathin oxides

Kang, Yong-Ju; Kang, Joon Goo; Kim, Yong-Hoonresearcher; Chang, Kee-Jooresearcher, COMPUTER PHYSICS COMMUNICATIONS, v.177, pp.30 - 33, 2007-07

Non-equilibrium Greens function approach to three-dimensional carbon nanotube field effect transistor Simulations

Shin, Mincheolresearcher, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.52, no.4, pp.1287 - 1291, 2008-04

Performance Assessment of III-V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs

Lee, Jaehyun; Shin, Mincheolresearcher, IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.726 - 728, 2014-07

Quantum transport of holes in 1D, 2D, and 3D devices: the k center dot p method

Shin, Mincheolresearcher, JOURNAL OF COMPUTATIONAL ELECTRONICS, v.10, no.1-2, pp.44 - 50, 2011-06

Simulation Study of Germanium p-Type Nanowire Schottky Barrier MOSFETs

Lee, Jaehyun; Shin, Mincheolresearcher, IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.342 - 344, 2013-03

Three-dimensional quantum simulation of multigate nanowire field effect transistors

Shin, Mincheolresearcher, MATHEMATICS AND COMPUTERS IN SIMULATION, v.79, no.4, pp.1060 - 1070, 2008-12



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