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Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations Choi, Eun-Ae; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.94, no.12, pp.122901 - 122901, 2009-03 |
Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer Yang, Shinhyuk; Cho, Doo-Hee; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jang, Jin; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.96, no.21, 2010-05 |
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