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Showing results 1 to 5 of 5

1
Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors

Seo, Seok-Jun; Jeon, Jun-Hyuck; Hwang, Young-Hwan; Bae, Byeong-Soo, APPLIED PHYSICS LETTERS, v.99, no.15, 2011-10

2
Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

Basu, S.; Lee, Bong Jae; Zhang, Z. M., JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, v.132, no.2, 2010-02

3
Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor

Kim, Sung-Ho; Choi, Sung-Jin; Jang, Moon-Gyu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.6, 2009-08

4
Near-Field Radiation Calculated With an Improved Dielectric Function Model for Doped Silicon

Basu, S.; Lee, Bong Jae; Zhang, Z. M., JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, v.132, no.2, 2010-02

5
The effect of impurities on hydrogen bonding site and local vibrational frequency in ZnO

Bang, Junhyeok; Choi, Eun-Ae; Chang, Kee-Joo, JOURNAL OF APPLIED PHYSICS, v.106, no.5, pp.053522 - 053522, 2009-09

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