| 1 | Curing of Aged Gate Dielectric by the Self-Heating Effect in MOSFETs Park, Jun-Young; Moon, Dong-Il; Lee, Geon-Beom; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.3, pp.777 - 788, 2020-03 |
| 2 | DC and AC Characteristics of sub-50 nm MOSFETs with Source/Drain-to-Gate Non-overlapped Structure hyunjin lee; jongho lee; hyungcheol shin, NANOTECHNOLOGY, v.1, no.4, pp.219 - 224, 2002 |
| 3 | Enhanced Device Performance of Germanium Nanowire Junction less (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment Yoon, Young Gwang; Kim, Tae Kyun; Hwang, In-Chan; Lee, Hyun-Seung; Hwang, Byeong Woon; Moon, Jung-Min; Seo, Yu Jin; et al, ACS APPLIED MATERIALS & INTERFACES, v.6, no.5, pp.3150 - 3155, 2014-03 |
| 4 | Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique Cho, WJ; Ahn, CG; Im, KJ; Yang, JH; Oh, Jihun; Baek, IB; Lee, S, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.366 - 368, 2004-06 |
| 5 | Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs Kim, Seong Kwang; Lim, Hyeong-Rak; Jeong, Jaejoong; Lee, Seung Woo; Jeong, Ho Jin; Park, Juhyuk; Kim, Joon Pyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.393 - 399, 2024-01 |
| 6 | Quantum mechanical simulation of hole transport in p-type Si nanowire schottky barrier MOSFETs = P형 실리콘 나노와이어 쇼트키 배리어 트랜지스터에서의 양자 수송 시뮬레이션link Choi, Won-Chul; 최원철; et al, 한국과학기술원, 2011 |
| 7 | Quantum mechanical simulation of hole transport in p-type Si nanowire schottky barrier MOSFETs = P형 실리콘 나노와이어 쇼트키 배리어 트랜지스터에서의 양자 수송 시뮬레이션link Choi, Won-Chul; 최원철; et al, 한국과학기술원, 2011 |
| 8 | Quantum Mechanical Simulation of Hole Transport in p-Type Si Schottky Barrier MOSFETs Choi, Wonchul; Shin, Mincheol, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, pp.5861 - 5864, 2011-07 |
| 9 | Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12 |
| 10 | (The) study of band structure and transport of silicon nanowire with various cross sections using finite element method = FEM을 활용한 다양한 단면을 가진 실리콘 나노와이어의 밴드 구조와 전자수송에 대한 연구link Park, Sangchun; Shin, Mincheol; et al, 한국과학기술원, 2017 |
