Browse by Subject through-silicon via (TSV)▼anonlinear Poisson’s equation▼ametal-oxide-semiconductor (MOS) capacitance▼akeep-out zone (KOZ)▼ainterface charge density (Dit)▼alateral nonuniformity (LNU)
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| Metal-oxide-semiconductor capacitance modeling of through-silicon vias for high density 3-D ICs = 고밀도 삼차원 집적 회로를 구현하기 위한 실리콘 관통 전극의 금속-산화물-반도체 커패시턴스 모델링link Kim, Kibeom; Ahn, Seungyoung; et al, 한국과학기술원, 2019 |
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