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Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing Bae, Hagyoul; Jun, Sungwoo; Kim, Choong-Ki; Ju, Byeong-Kwon; Choi, Yang-Kyu, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.10, 2018-03 |
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