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Showing results 1 to 11 of 11

1
Abnormal electrical characteristics of multi-layered MoS2 FETs attributed to bulk traps

Kim, Choong-Ki; Yu, Chan Hak; Hur, Jae; Bae, Hagyoul; Jeon, Seung-Bae; Park, Hamin; Kim, Yong Min; et al, 2D MATERIALS, v.3, no.1, pp.015007, 2016-03

2
Conduction and Low-Frequency Noise Analysis in Al/alpha-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices

Lee, Jung-Kyu; Jeong, Hu Young; Cho, In-Tak; Lee, JeongYong; Choi, Sung-Yool; Kwon, Hyuck-In; Lee, Jong-Ho, IEEE ELECTRON DEVICE LETTERS, v.31, no.6, pp.603 - 605, 2010-06

3
Demonstration of Thermally-Assisted Programming with High Speed and Improved Reliability for Junctionless Nanowire NOR Flash Memory

Yu, Ji-Man; Park, Jun-Young; Lee, Geon-Beom; Han, Joon-Kyu; Kim, Myung-Su; Hur, Jae; Yun, Dae-Hwan; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.18, pp.1110 - 1113, 2019-10

4
High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure

Lee, Jung-Woo; Han, Joon-Kyu; Wang, Dong-Hyun; Yun, Seong-Yun; Oh, Jeong-Seob; Bang, Byeong-Chan; Cha, Won-Hyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.4, pp.2801 - 2804, 2024-04

5
Improved Self-Curing Effect in a MOSFET with Gate Biasing

Lee, Geon-Beom; Jung, Jin-Woo; Kim, Choong-Ki; Bang, Tewook; Yoo, Min-Soo; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.42, no.12, pp.1731 - 1734, 2021-12

6
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Seo, Yujin; Kim, Choong-Ki; Lee, Tae-In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang-Kyu; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001, 2017-10

7
Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate-All-Around Junctionless Nanowire FET

Jeong, Ui-Sik; Kim, Choong-Ki; Bae, Hagyoul; Moon, Dong-Il; Bang, Tewook; Choi, Ji-Min; Hur, Jae; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.5, pp.2210 - 2213, 2016-05

8
Reliability Improvement of Gate-All-Around Junctionless SONOS Memory by Joule Heat From Inherent Nanowire Current

Lee, Jung-Woo; Han, Joon-Kyu; Kim, Myung-Su; Yu, Ji-Man; Jung, Jin-Woo; Yun, Seong-Yun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.11, pp.6133 - 6138, 2022-11

9
Reliability Improvement of Gate-All-Around SONOS Memory by Joule Heat From Gate-Induced Drain Leakage Current

Lee, Jung-Woo; Han, Joon-Kyu; Yu, Ji-Man; Lee, Geon-Beom; Tcho, Il-Woong; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.115 - 119, 2022-01

10
The Influence of Hydrogen on Defects of In-Ga-Zn-O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3

Kim, Taeho; Nam, Yunyong; Hur, Jihyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.37, no.9, pp.1131 - 1134, 2016-09

11
Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With Sin(x) and SiO2 Gate Dielectrics by Low-Frequency Noise Measurements

Choi, Hyun-Sik; Jeon, Sanghun; Kim, Hojung; Shin, Jaikwang; Kim, Changjung; Chung, U-In, IEEE ELECTRON DEVICE LETTERS, v.32, no.8, pp.1083 - 1085, 2011-08

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