Showing results 1 to 17 of 17
Automatic resonant frequency matching of power amplifier by transformer loop sampling Lee, Han-Lim; Jang, Hyeong-Seok; Park, Dong-Hoon; Lee, Moon-Que; Yu, Jong-Won, ELECTRONICS LETTERS, v.51, no.6, pp.510 - 511, 2015-03 |
Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations Choi, Eun-Ae; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.94, no.12, pp.122901 - 122901, 2009-03 |
Effect of particle size on the UV pulsed-laser scribing in computational fluid dynamics-based simulations Park, Kwan-Woo; Na, Suck-Joo, JOURNAL OF APPLIED PHYSICS, v.107, no.11, 2010-06 |
Electrical transport and mechanical properties of alkylsilane self-assembled monolayers on silicon surfaces probed by atomic force microscopy Park, JeongYoung; Qi, YB; Ashby, PD; Hendriksen, BLM; Salmeron, M, JOURNAL OF CHEMICAL PHYSICS, v.130, no.11, 2009-03 |
Fabrication of Polycrystalline Si Films by Vapor-Induced Crystallization and Rapid Thermal Annealing Process Yang, Yong-Ho; Ahn, Kyung-Min; Ahn, Byung-Tae, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.8, pp.92 - 95, 2010 |
Flow-induced voltage generation in high-purity metallic and semiconducting carbon nanotubes Lee, SH; Kim, D; Kim, Soohyun; Han, CS, APPLIED PHYSICS LETTERS, v.99, no.10, 2011-09 |
Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k center dot p method Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.106, no.5, 2009-09 |
Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application Hasan, Musarrat; Yun, Sun Jin; Koo, Jae Bon; Park, Sang Hee Ko; Kim, Yong Hae; Kang, Seung Youl; Rho, Jonghyun; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.3, pp.80 - 82, 2010 |
Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device Park, Jong-Kyung; Park, Young-Min; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; Cho, Byung-Jin, APPLIED PHYSICS LETTERS, v.96, no.22, 2010-05 |
Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature Basu, S.; Lee, Bong Jae; Zhang, Z. M., JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, v.132, no.2, 2010-02 |
Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10 |
Near-Field Radiation Calculated With an Improved Dielectric Function Model for Doped Silicon Basu, S.; Lee, Bong Jae; Zhang, Z. M., JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, v.132, no.2, 2010-02 |
Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors Baek, David J.; Seol, Myeong-Lok; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.100, no.9, 2012-02 |
Temperature and bias dependence of Hanle effect in CoFe/MgO/composite Ge Jeon, Kun-Rok; Min, Byoung-Chul; Park, Youn-Ho; Lee, Hun-Sung; Park, Chang-Yup; Jo, Young-Hun; Shin, Sung-Chul, APPLIED PHYSICS LETTERS, v.99, no.16, 2011-10 |
Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells Fang, Liang; Baik, Seung-Jae; Lim, Koeng-Su; Yoo, Seung-Hyup; Seo, Myung-Soo; Kang, Sang-Jung; Seo, Jung-Won, APPLIED PHYSICS LETTERS, v.96, no.19, pp.193501, 2010-05 |
Wide memory window in graphene oxide charge storage nodes Wang, Shuai; Pu, Jing; Chan, Daniel S. H.; Cho, Byung Jin; Loh, Kian Ping, APPLIED PHYSICS LETTERS, v.96, no.14, 2010-04 |
Wide-angle 2D beam-steering with Si-based 16 x (1 x 16) optical phased arrays Yoon, H.; Lee, D. -S.; Kim, S. -H.; Kang, G.; Shim, J.; Rhee, H.; Kwon, N.; et al, ELECTRONICS LETTERS, v.56, no.10, pp.501 - +, 2020-05 |
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