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Showing results 1 to 3 of 3

1
Fabrication of submicron Y-gate InP metal semiconductor field effect transistors using crystallographically defined contact technology

Yoon, M; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.2237 - 2240, 2003-04

2
First principles study of Li diffusion in I-Li2NiO2 structure

Kang, Kisuk; Morgan, Dane; Ceder, Gerbrand, PHYSICAL REVIEW B, v.79, no.1, 2009-01

3
Performance of new self-aligned InP/InGaAs heterojunction bipolar transistors using crystallographically defined emitter contact technology

Kim, M; Kim, T; Jeon, S; Yoon, M; Kwon, Young Se; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.2B, pp.1139 - 1142, 2002-02

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