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NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications Jang, WW; Yoon, Jun-Bo; Kim, MS; Lee, JM; Kim, SM; Yoon, EJ; Cho, KH; et al, SOLID-STATE ELECTRONICS, v.52, no.10, pp.1578 - 1583, 2008-10 |
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