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Showing results 1 to 13 of 13

1
Analysis of Trapped Charges in Dopant-Segregated Schottky Barrier-Embedded FinFET SONOS Devices

Choi, Sung-Jin; Han, Jin-Woo; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.10, pp.1084 - 1086, 2009-10

2
Barrier Height Measurement of Metal Contacts to Si Nanowires Using Internal Photoemission of Hot Carriers

Yoon, KunHo; Hyun, Jerome K.; Connell, Justin G.; Amit, Iddo; Rosenwaks, Yossi; Lauhon, Lincoln J., NANO LETTERS, v.13, no.12, pp.6183 - 6188, 2013-12

3
Donor acceptor bifunctionality of dysprosium in perovskite calcium copper titanate polycrystals

Jo, Giyoung; Chung, Heesuk; Kang, Suk-Joong L; Chung, Sung-Yoon, CURRENT APPLIED PHYSICS, v.17, no.9, pp.1208 - 1214, 2017-09

4
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

Noh, Hyeon-Kyun; Oh, Young-Jun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2907 - 2910, 2012-08

5
Fin Width (W-fin) Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device

Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.71 - 73, 2010-01

6
Graphene electrode with tunable charge transport in thin-film transistors

Park, Ick Joon; Kim, Tae In; Cho, In-Tak; Song, Chang-Woo; Yang, Ji-Woong; Park, Hongkeun; Cheong, Woo-Seok; et al, NANO RESEARCH, v.11, no.1, pp.274 - 286, 2018-01

7
Graphene for True Ohmic Contact at Metal-Semiconductor Junctions

Byun, Kyung-Eun; Chung, Hyun-Jong; Lee, Jaeho; Yang, Heejun; Song, Hyun Jae; Heo, Jinseong; Seo, David H.; et al, NANO LETTERS, v.13, no.9, pp.4001 - 4005, 2013-09

8
High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for NOR-type Flash Memory

Choi, Sung-Jin; Han, Jin-Woo; Jang, Moon-Gyu; Kim, Jin-Soo; Kim, Kwang-Hee; Lee, Gi-Sung; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.3, pp.265 - 268, 2009-03

9
In Situ Formation of Multiple Schottky Barriers in a Ti(3)C(2)MXene Film and its Application in Highly Sensitive Gas Sensors

Choi, Junghoon; Kim, Yong-Jae; Cho, Soo-Yeon; Park, Kangho; Kang, Hohyung; Kim, Seon Joon; Jung, Hee-Tae, ADVANCED FUNCTIONAL MATERIALS, v.30, no.40, pp.2003998, 2020-10

10
Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots

Lee, JI; Nam, HD; Choi, WJ; Yu, BY; Song, JD; Hong, Songcheol; Noh, SK; et al, CURRENT APPLIED PHYSICS, v.6, no.6, pp.1024 - 1029, 2006-10

11
Performance Assessment of III-V Channel Ultra-Thin-Body Schottky-Barrier MOSFETs

Lee, Jaehyun; Shin, Mincheol, IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.726 - 728, 2014-07

12
Quantum mechanical simulation of hole transport in p-type Si nanowire schottky barrier MOSFETs = P형 실리콘 나노와이어 쇼트키 배리어 트랜지스터에서의 양자 수송 시뮬레이션link

Choi, Won-Chul; 최원철; et al, 한국과학기술원, 2011

13
Quantum mechanical simulation of hole transport in p-type Si nanowire schottky barrier MOSFETs = P형 실리콘 나노와이어 쇼트키 배리어 트랜지스터에서의 양자 수송 시뮬레이션link

Choi, Won-Chul; 최원철; et al, 한국과학기술원, 2011

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