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Showing results 1 to 5 of 5

1
Characteristics of InGaN/GaN light-emitting diode with Si delta-doped GaN contact layer

Jeon, SR; Jo, MS; Humg, TV; Yang, GM; Cho, HK; Lee, JeongYong; Hwang, SW; et al, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.188, no.1, pp.163 - 166, 2001-11

2
Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM; Song, JH; Yu, PW, JOURNAL OF APPLIED PHYSICS, v.89, no.5, pp.2617 - 2621, 2001-03

3
Formation of misfit dislocations and stacking faults in high indium content InxGa1-xN layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.165 - 169, 2001-12

4
Microstructured Air Cavities as High-Index Contrast Substrates with Strong Diffraction for Light-Emitting Diodes

Moon, Yoon-Jong; Moon, Daeyoung; Jang, Jeonghwan; Na, Jin-Young; Song, Jung-Hwan; Seo, Min-Kyo; Kim, Sunghee; et al, NANO LETTERS, v.16, no.5, pp.3301 - 3308, 2016-05

5
Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density

Cho, HK; Lee, JeongYong; Choi, SC; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.222, no.1-2, pp.104 - 109, 2001-01

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