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Showing results 1 to 6 of 6

1
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.138 - 140, 2004-03

2
Characterization of low-temperature stress hump in relation to phase formation sequence of nickel silicide

Hong, JE; Byun, JS; Kim, SI; Ahn, Byung Tae, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.44, pp.145 - 146, 2005-01

3
Characterization of Low-Temperature Stress Hump in Relation to Phase Formation Sequence of Nickel Silicide

Hong, Jeon Eui; Byun, Jeong Soo; Kim, Sun Il; Ahn, Byung Tae, Japanese Journal of Applied Physics, Vol.44, No.1A, pp.145-146, 2005

4
Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current

Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.11, pp.2902 - 2906, 2010-11

5
MOCVD $CoSi_2$ 의 열안정성 향상 및 니켈 실리사이드의 저온 응력증가 특성에 관한 연구 = Improvement in thermal stability of MOCVD $CoSi_2$ and characterization of low- temperature stress hump of nickel silicidelink

홍정의; Hong, Jeong-Eui; et al, 한국과학기술원, 2005

6
P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain

Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Kim, Sung-Ho; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.8, pp.1737 - 1742, 2010-08

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