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Showing results 1 to 4 of 4

1
Four-Bits-Per-Cell Operation in an HfO2-Based Resistive Switching Device

Kim, Gun Hwan; Ju, Hyunsu; Yang, Min Kyu; Lee, Dong Kyu; Choi, Ji Woon; Jang, Jae Hyuck; Lee, Sang Gil; et al, SMALL, v.13, no.40, 2017-10

2
Improvement of the multi-level cell performance by a soft program method in flash memory devices

Park, Jong Kyung; Lee, Ki-Hong; Pyi, Seung Ho; Lee, Seok-Hee; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.94, pp.86 - 90, 2014-04

3
Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

Baik, Seung Jae; Lim, Koeng Su; Choi, Wonsup; Yoo, Hyunjun; Lee, Jang-Sik; Shin, Hyunjung, NANOSCALE, v.3, no.6, pp.2560 - 2565, 2011

4
Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide

Shin, Gwang Hyuk; Kim, Choong-Ki; Bang, Gyeong Sook; Kim, Jong-Yun; Jang, Byung Chul; Koo, Beom Jun; Woo, Myung Hun; et al, 2D MATERIALS, v.3, no.3, 2016-09

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