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Showing results 1 to 4 of 4

1
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs

Guan, H; Li, MF; He, YD; Cho, Byung Jin; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08

2
First-principles study of oxygen vacancy in amorphous hafnium silicates = 비정질 하프늄 실리케이트 구조 내에서의 산소 결핍 결함에 관한 제일원리 연구link

Noh, Hyeon-Kyun; 노현균; et al, 한국과학기술원, 2009

3
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

Ang, CH; Ling, CH; Cho, Byung Jin; Kim, SJ; Cheng, ZY, SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007, 2000-11

4
Sub-50 nm p-channel FinFET

Huang, XJ; Lee, WC; Kuo, C; Hisamoto, D; Chang, LL; Kedzierski, J; Anderson, E; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.880 - 886, 2001-05

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