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Showing results 1 to 3 of 3

1
Factors Determining the Resistive Switching Behavior of Transparent InGaZnO-Based Memristors

Qin, Fei; Zhang, Yuxuan; Park, Honghwi; Kim, Chung Soo; Lee, Dong Hun; Jiang, Zhong-Tao; Park, Jeongmin; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.7, 2022-07

2
Ferroelectricity in CMOS-Compatible Hafnium Oxides Reviving the ferroelectric field-effect transistor technology

Das, Dipjyoti; Khan, Asif Islam, IEEE NANOTECHNOLOGY MAGAZINE, v.15, no.5, pp.20 - 32, 2021-10

3
Observation of Irreversible Current Path in Polymer Dielectric using Conductive Atomic Force Microscope

Jung, Ji-Hoon; Kim, Woo Young; Kim, Do-Kyung; Kwon, Jin-Hyuk; Lee, Hee-Chul; Bae, Jin-Hyuk, ELECTRONIC MATERIALS LETTERS, v.11, no.2, pp.246 - 251, 2015-03

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