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Showing results 1 to 5 of 5

1
Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance-Voltage Characteristics in Amorphous Semiconductor TFTs

Choi, Hyunjun; Lee, Jungmin; Bae, Hagyoul; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.8, pp.2689 - 2694, 2015-08

2
Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming

Yang, Jong-Heon; Byun, Chun-Won; Pi, Jae-Eun; Kim, Hee-Ok; Hwang, Chi-Sun; Yoo, Seunghyup, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.120 - 126, 2022-01

3
Effects of the oxygen vacancy concentration in InGaZnO-Based RRAM = InGaZnO물질기반의 RRAM 소자에 산소 결핍 농도의 효과에 관한 연구link

Kim, Moon-Seok; 김문석; et al, 한국과학기술원, 2013

4
Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors

Cho, Sung Haeng; Ryu, Min Ki; Kim, Hee-Ok; Kwon, Oh-Sang; Park, Eun-Sook; Roh, Yong-Suk; Hwang, Chi-Sun; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.9, pp.2126 - 2133, 2014-09

5
The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors

Kim, Sangwook; Kim, Sunil; Kim, Changjung; Park, JaeChul; Song, Ihun; Jeon, Sanghun; Ahn, Seung-Eon; et al, SOLID-STATE ELECTRONICS, v.62, no.1, pp.77 - 81, 2011-08

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