DSpace at KOASAS: Browsing DSpace

DSpace at KOASAS

Browsing DSpace

Browse by Author hyungcheol shin

Sort by:
In order:
Results/Page
Authors/Record:

Showing results 1 to 18 of 18

1	50-nm MOSFET with Electrically Induced Source/Drain Extensions sangyeon han; sung-il chang; jongho lee; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.1, pp.39 - 44, 2002-01
2	50nm MOSFET with Electrically Induced Source/Drain Extensions sangyeon han; sung-il chang; jongho lee; hyungcheol shin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.9, pp.2058 - 2064, 2001-09
3	A 25-nm MOSFET with an Electrically Induced Source/Drain sungil chang; sangyeon han; jongho lee; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.902 - 906, 2000-12
4	A Nano-Structure Memory with SOI Edge Channel and a Nano Dot geunsook park; sangyeon han; taekeun hwang; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.12B, pp.7190 - 7192, 1998-12
5	A Nano-structure Memory with SOI Edge Channel and A Nono Dot geunsook park; sangyeon han; hyungcheol shin, 전자공학회논문지, v.35, no.12, pp.48 - 52, 1998-12
6	CMOS Implementation of a 2.4-GHz Switch Mixer and Quadrature VCO joonho gil; ickjin kwon; kwyro lee; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, no.2, pp.241 - 245, 2003-02
7	DC and AC Characteristics of sub-50 nm MOSFETs with Source/Drain-to-Gate Non-overlapped Structure hyunjin lee; jongho lee; hyungcheol shin, NANOTECHNOLOGY, v.1, no.4, pp.219 - 224, 2002
8	Design of a New Low-power 2.4 GHz CMOS LNA ickjin kwon; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.1, pp.4 - 7, 2002-01
9	Extraction of Channel Thermal Noise for Deep-Submicron NMOSFETs kwangseok han; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.4, pp.501 - 504, 2002-10
10	Gate Delay Characteristics of a Sub-30nm MOS Device with Non-Overlapped Source-Drain to Gate Fegion hyunjin lee; sung-il chang; hyungcheol shin; joungho lee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.937 - 941, 2002-12
11	Hole and Valence Band Electron Tunneling in a P-Channel Si Nano-Crystal Memory kwangseok han; ilgweon kim; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.907 - 911, 2000-12
12	Lateral Silicon Field-Emission Devices Using Electron Beam Lithography sangyeon han; sun-a yang; taekeun hwang; jongho lee; jong duk lee; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v.39, no.5A, pp.2556 - 2559, 2000-05
13	Off-state Leakage Currents of MOSFETs with High-k Dielectrics sungil chang; hyungcheol shin; jongho lee, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.932 - 936, 2002-12
14	On-chip helical Inductors for CMOS RF-ICs joonho gil; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, no.1, pp.49 - 51, 2002-01
15	Optimization of Silicon Quantum Dot Fabrication on Oxide and Nitride Films hyungcheol shin; jongho lee, 전기학회논문지, v.4, no.4, pp.519 - 522, 1999-08
16	Programming Characteristics of P-Channel Si Nano-Crystal Memory kwangseok han; ilgweon kim; hyungcheol shin, IEEE ELECTRON DEVICE LETTERS, v.21, no.6, pp.313 - 315, 2000-06
17	Si Nano-Crystal Memory Cell with Room Temperature Single Electron Effects ilgweon kim; sangyeon han; kwangseok han; jongho lee; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS, v.40, no.2A, pp.447 - 451, 2001-02
18	Simulating Process-Induced Gate Oxide Damage in Circuits robert tu; joseph c. king; hyungcheol shin; chenming hu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.44, no.9, pp.1393 - 1400, 1997-09

Discover

KOASAS

Knowledge Service Development Team, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea. T. 82-42-350-4493 Email. koasas@kaist.ac.kr
Copyright © 2016. Korea Advanced Institute of Science and Technology. All Rights Reserved.

Communities & Collections

rss_1.0 rss_2.0 atom_1.0