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1
High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

Zhang, Xiao-Hong; Domercq, Benoit; Wang, Xudong; Yoo, Seunghyup; Kondo, Takeshi; Wang, Zhong Lin; Kippelen, Bernard, ORGANIC ELECTRONICS, v.8, no.6, pp.718 - 726, 2007-12

2
The Highly Operational Team (HOT) toward f-Block Materials

Park, Kyoung Chul; Kittikhunnatham, Preecha; Lim, Jaewoong; Thaggard, Grace C.; Liu, Yuan; Martin, Corey R.; Leith, Gabrielle A.; et al, ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.62, no.32, 2023-08

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