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Showing results 1 to 6 of 6

1
Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate

Yoon, Sung-Min; Jung, Soon-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Yu, Byoung-Gon; Ishiwara, Hiroshi, CURRENT APPLIED PHYSICS, v.11, no.3, pp.219 - 224, 2011-05

2
Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

Yoon, Sung-Min; Yang, Shin-Hyuk; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.24, 2009-12

3
Effects of barrier layers on the electrical behaviors of phase-change memory devices using Sb-rich Ge-Sb-Te films

Yoon, Sung-Min; Choi, Kyu-Jeong; Park, Sang-Hee Ko; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon, INTEGRATED FERROELECTRICS, v.93, no.1, pp.75 - 82, 2007

4
Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Ryu, Min-Ki; Park, Sang-Hee Ko; Kim, ByeongHoon; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.26, no.3, 2011-03

5
Organic wrinkles embedded in high-index medium as planar internal scattering structures for organic light-emitting diodes

Cho, Hyunsu; Kim, Eunhye; Moon, Jaehyun; Joo, Chul Woong; Kim, Eungjun; Park, Seung Koo; Lee, Jonghee; et al, ORGANIC ELECTRONICS, v.46, pp.139 - 144, 2017-07

6
Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

Park, Il-Mok; Jung, Jung-Kyu; Ryu, Sang-Ouk; Choi, Kyu-Jeong; Yu, Byoung-Gon; Park, Young-Bae; Han, Seung Min J.; et al, THIN SOLID FILMS, v.517, no.2, pp.848 - 852, 2008-11

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