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Showing results 1 to 4 of 4

1
CHARACTERIZATION OF PEAK SHAPE-PARAMETERS WITH NORMAL AND DERIVATIVE CHROMATOGRAMS

Jung, Kyung Hoon; YUN, SJ; KANG, SH, ANALYTICAL CHEMISTRY, v.56, no.3, pp.457 - 462, 1984

2
CHARACTERIZATION OF SILICON SURFACE CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY C2F6 CHF3 REACTIVE ION ETCHING

YUN, SJ; PARK, SJ; PAEK, MC; Lee, JeongYong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.137, no.8, pp.2634 - 2639, 1990-08

3
PHASE-TRANSFORMATION OF CRYSTALLINITY OF SI1-XGEX LAYERS GROWN ON SI(001) BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY

LEE, SC; Lee, JeongYong; YUN, SJ, JOURNAL OF CRYSTAL GROWTH, v.150, no.1-4, pp.974 - 979, 1995-05

4
THE EFFECT OF IN-SITU BORON DOPING ON THE STRAIN RELAXATION OF SI0.8GE0.2-B/SI HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY

LEE, SC; YUN, SJ; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.150, no.1-4, pp.999 - 1004, 1995-05

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