DSpace at KOASAS
Browsing DSpace

Browse by Author Pu, Jing

A to Z

All 0-9

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

or enter first few letters:

Showing results 1 to 5 of 5

1
Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11

2
Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell

Pu, Jing; Kim, Sun-Jung; Kim, Young-Sun; Cho, Byung Jin, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.9, pp.252 - 254, 2008-06

3
P-type floating gate for retention and P/E window improvement of flash memory devices

Shen, Chen; Pu, Jing; Li, Ming-Fu; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1910 - 1917, 2007-08

4
Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide

He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11

5
Wide memory window in graphene oxide charge storage nodes

Wang, Shuai; Pu, Jing; Chan, Daniel S. H.; Cho, Byung Jin; Loh, Kian Ping, APPLIED PHYSICS LETTERS, v.96, no.14, 2010-04

Discover

rss_1.0 rss_2.0 atom_1.0