Browse by Author Pu, J
Showing results 1 to 7 of 7
| Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory Pu, J; Kim, SJ; Lee, SH; Kim, YS; Kim, ST; Choi, KJ; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.688 - 690, 2008-07 |
| Dual metal gate process scheme for wide range work function modulation and reduced Fermi level pinning Cho, Byung Jin; Park, CS; Lwin, PW; Wong, SY; Pu, J; Hwang, WS, 3rd International Conference on Materials for Advanced Technologies, pp.41 - 41, 2005-07-03 |
| Gadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices Cho, Byung Jin; Pu, J; Kim, SJ; Kim, YS, Material Research Society 2008 Spring Meeting, 2008-03-25 |
| High-K Dielectrics for Charge Trap - type Flash Memory Application Cho, Byung Jin; He, W; Pu, J, 2008 Asia-Pacific Workshop on Fundamentals and Applications on Advanced Semiconductor Devices, pp.37 - 41, 2008-07-09 |
| Improvement of retention and Vth window in Flash memory device through optimization of floating gate doping Cho, Byung Jin; Shen, C; Pu, J; Li, MF, IEEE 2nd International conference on memory technology and design, pp.99 - 101, 2007-03-07 |
| Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11 |
| Rare earth oxide (Gd2O3) s a blocking layer in SONOS-type nonvolatile memory devices for high speed operation 조병진; Pu, J; Kim, SJ; Kim, YS, 한국반도체 학술대회, pp.615 - 616, 2008 |
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