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THE EFFECTS OF POINT-DEFECTS ON THE ELECTRICAL ACTIVATION OF SI-IMPLANTED GAAS DURING RAPID THERMAL ANNEALING LEE, JL; WEI, L; TANIGAWA, S; NAKAGAWA, T; OHTA, K; Lee, JeongYong, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.39, no.1, pp.176 - 183, 1992-01 |
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