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1
Low power operating bipolar TMO ReRAM for sub 10 nm era

Kim M.J.; Baek I.G.; Ha Y.H.; Baik, Seung Jae; Kim J.H.; Seong D.J.; Kim S.J.; et al, 2010 IEEE International Electron Devices Meeting, IEDM 2010, IEDM, 2010-12-06

2
Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

Kurokawa A.; Maeda T.; Sakamoto K.; Itoh H.; Nakamura K.; Koike K.; Moon D.W.; et al, Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics, v.567, pp.21 - 26, 1999-04-05

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